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APTM100A13SCG
Phase leg
Series & SiC parallel diodes
VDSS = 1000V RDSon = 130m typ @ Tj = 25C ID = 65A @ Tc = 25C
Application * Motor control * Switched Mode Power Supplies * Uninterruptible Power Supplies Features * Power MOS 7(R) MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged * Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration
MOSFET Power Module
VBUS
Q1 G1 OUT S1
Q2 G2 0/VBUS
S2
* *
G1 S1 VBUS 0/VBUS OUT
*
S2 G2
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS
Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Low profile * RoHS Compliant Max ratings 1000 65 49 240 30 156 1250 24 30 1300 Unit V A V m W A mJ
Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C
Tc = 25C
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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1-7
APTM100A13SCG - Rev 2
July, 2006
APTM100A13SCG
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Test Conditions Min Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current
VGS = 0V,VDS= 1000V VGS = 0V,VDS= 800V
Tj = 25C Tj = 125C
Typ
VGS = 10V, ID = 32.5A VGS = VDS, ID = 6mA VGS = 30 V, VDS = 0V
130 3
Max 600 2 156 5 450
Unit A mA m V nA
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 500V ID = 65A Inductive switching @125C VGS = 15V VBus = 667V ID = 65A R G = 0.5 Inductive switching @ 25C VGS = 15V, VBus = 667V ID = 65A, R G = 0.5 Inductive switching @ 125C VGS = 15V, VBus = 667V ID = 65A, R G = 0.5
Min
Typ 15.2 2.6 0.42 562 75 363 9 9 50 24 1278 462 2671 570
Max
Unit nF
nC
ns
J J
Series diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage
Test Conditions VR=200V IF = 60A IF = 120A IF = 60A IF = 60A VR = 133V
di/dt = 400A/s
Min 200 Tj = 25C Tj = 125C Tc = 85C
Typ
Max 350 600
Unit V A A
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
60 1.1 1.4 0.9 24 48 66 300
1.15 V
trr Qrr
Reverse Recovery Time Reverse Recovery Charge
ns nC
July, 2006 2-7 APTM100A13SCG - Rev 2
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APTM100A13SCG
SiC Parallel diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF QC Q Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Total Capacitive Charge Total Capacitance IF = 40A Test Conditions VR=1200V Tj = 25C Tj = 125C Tc = 125C Tj = 25C Tj = 175C Min 1200 Typ 400 800 40 1.6 2.6 112 360 264 Min Transistor Series diode Parallel diode 2500 -40 -40 -40 3 2 Typ Max 0.10 0.65 0.35 150 125 100 5 3.5 280 Max 1600 8000 1.8 3.0 Unit V A A V nC pF
IF = 40A, VR = 600V di/dt =2000A/s f = 1MHz, VR = 200V f = 1MHz, VR = 400V
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance
Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5
SP6 Package outline (dimensions in mm)
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
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APTM100A13SCG - Rev 2
July, 2006
APTM100A13SCG
Typical MOSFET Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.12 Thermal Impedance (C/W) 0.1 0.08 0.06 0.04 0.02 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse
0 0.00001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 180 I D, Drain Current (A) ID, Drain Current (A) 150 120 90 60 30 0 0 4 8 12 16 20 24 28 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current ID, DC Drain Current (A)
Normalized to VGS =10V @ 32.5A V GS=10V V GS=20V 6V VGS=15&10V 7V 6.5V
Transfert Characteristics 360 300 240 180 120 60 0 0 1 2 3 4 5 6
T J=25C TJ=125C T J=-55C
VDS > I D(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle
5.5V 5V
7
8
9 10
VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 70 60 50 40 30 20 10 0 25 50 75 100 125 150
July, 2006 4-7 APTM100A13SCG - Rev 2
RDS(on) Drain to Source ON Resistance
1.4 1.3 1.2 1.1 1 0.9 0.8 0
30
60
90
120
150
180
ID, Drain Current (A)
TC, Case Temperature (C)
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APTM100A13SCG
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) I D, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage VGS, Gate to Source Voltage (V) 100000 C, Capacitance (pF) Ciss 10000 Coss 1000 Crss 14 12 10 8 6 4 2 0 0 120 240 360 480 600 720 840 Gate Charge (nC)
July, 2006
ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area
VGS =10V ID=32.5A
1000
100s
limited by RDSon
100
1ms
10
Single pulse TJ=150C TC=25C 1
10ms
1 10 100 1000 VDS , Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage ID=65A TJ=25C
V DS =500V V DS =200V
VDS=800V
100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V)
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5-7
APTM100A13SCG - Rev 2
APTM100A13SCG
Delay Times vs Current 60 td(on) and td(off) (ns) 50
VDS=667V RG=0.5 T J=125C L=100H
Rise and Fall times vs Current 50
t d(off) 40 tr and tf (ns) 30 20 10 0 20 30 40 50 60 70 80 90 100 20 30 ID, Drain Current (A) Switching Energy vs Current 40 50 60 70 80 I D, Drain Current (A) 90 100
VDS=667V RG=0.5 T J=125C L=100H
40 30 20 10 0
tf tr
t d(on)
Switching Energy vs Gate Resistance
5
Switching Energy (mJ)
4
Switching Energy (mJ)
VDS=667V RG=0.5 T J=125C L=100H
4 3 2 1 0
Eon
3 2 1 0
Eon
Eoff
VDS=667V ID=65A T J=125C L=100H
Eoff
20
30
40
50
60
70
80
90 100
0
1
2
3
4
5
ID, Drain Current (A) Operating Frequency vs Drain Current
ZCS VDS=667V D=50% RG=0.5 T J=125C T C=75C
Gate Resistance (Ohms) Source to Drain Diode Forward Voltage I DR, Reverse Drain Current (A)
500 400
Frequency (kHz)
1000
100
T J=150C T J=25C
300 200 100 0 10 20
Hars switching
ZVS
10
30 40 50 ID, Drain Current (A)
60
1 0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
July, 2006
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6-7
APTM100A13SCG - Rev 2
APTM100A13SCG
Typical SiC Diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.4 Thermal Impedance (C/W) 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.9
0 0.00001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds) Forward Characteristics
TJ=25C
Reverse Characteristics
80
I F Forward Current (A)
1600
IR Reverse Current (A)
70 60 50 40 30 20 10 0 0 0.5 1
TJ=75C
1200 800 400 0 400
T J=125C TJ=175C
T J=75C T J=125C TJ=175C TJ=25C
1.5
2
2.5
3
3.5
600
VF Forward Voltage (V) Capacitance vs.Reverse Voltage
800 1000 1200 1400 1600 VR Reverse Voltage (V)
2800 C, Capacitance (pF) 2400 2000 1600 1200 800 400 0 1
July, 2006
10 100 VR Reverse Voltage
1000
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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7-7
APTM100A13SCG - Rev 2

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